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2SC3376

Part Number	2SC3376
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Sep 20, 2015
Detailed Description	isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.)...
Datasheet	2SC3376 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature ...

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