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ATP216

ON Semiconductor
Part Number ATP216
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Oct 31, 2015
Detailed Description Ordering number : EN8985A ATP216 N-Channel Power MOSFET 50V, 35A, 23mΩ, Single ATPAK http://onsemi.com Features • ON-...
Datasheet PDF File ATP216 PDF File

ATP216
ATP216


Overview
Ordering number : EN8985A ATP216 N-Channel Power MOSFET 50V, 35A, 23mΩ, Single ATPAK http://onsemi.
com Features • ON-resistance RDS(on)1=17mΩ(typ.
) • 1.
8V drive • Protection diode in • Slim package • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 50 ±10 35 105 40 150 --55 to +150 40 17.
5 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7057-001 6.
5 4 1.
5 0.
4 ATP216-TL-H 4.
6 2.
6 0.
4 Product & Package Information • Package : ATPAK • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type: TL Marking ATP216 LOT No.
TL 6.
05 0.
7 4.
6 1.
7 7.
3 0.
5 9.
5 0.
5 0.
1 2 1 0.
8 3 0.
6 2.
3 2.
3 0.
55 0.
4 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK Electrical Connection 2,4 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 62012 TKIM/51111PA TKIM TC-00002591 No.
8985-1/7 Electrical Characteristics at Ta=25°C ATP216 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forwa...



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