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ES6U2

Rohm
Part Number ES6U2
Manufacturer Rohm
Description 1.5V Drive Nch+SBD MOSFET
Published Nov 2, 2015
Detailed Description 1.5V Drive Nch+SBD MOSFET ES6U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zFeatures 1) Nch MOSFET an...
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ES6U2
ES6U2


Overview
1.
5V Drive Nch+SBD MOSFET ES6U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (1.
5V drive).
4) Built-in Low VF schottky barrier diode.
zApplications Switching zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) (1) (2) (3) Abbriviated symbol : U02 zInner circuit (6) (5) (4) zPackage specifications Package Type Code Basic ordering unit (pieces) ES6U2 Taping T2R 8000 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Limits 20 ±10 ±1.
5 ±3.
0 0.
5 3.
0 150 0.
7 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3)Anode (3) (4)Cathode (5)Drain (6)Drain Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cyc.
∗2 Mounted on ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 25 20 0.
5 2.
0 150 0.
5 Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.
8 −55 to +150 Unit W / TOTAL °C www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
1/5 2009.
12 - Rev.
A ES6U2 zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Gate-source leakage IGSS − Drain-source breakdown voltage V(BR) DSS 20 Zero gate voltage drain current IDSS − Gate threshold voltage Static drain-source on-state resistance VGS (th) RDS (on)∗ 0.
3 − − − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off del...


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