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ES6U3

Rohm
Part Number ES6U3
Manufacturer Rohm
Description 4V Drive Nch+SBD MOSFET
Published Nov 5, 2015
Detailed Description 4V Drive Nch+SBD MOSFET ES6U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) W...
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ES6U3
ES6U3

Overview
4V Drive Nch+SBD MOSFET ES6U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions (Unit : mm) WEMT6 SOT-563T (6) (5) (4) zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package.
2) High-speed switching, Low On-resistance.
3) Built-in Low VF schottky barrier diode.
(1) (2) (3) Abbriviated symbol : U03 zApplications Switching zInner circuit (6) (5) (4) zPackage specifications Type ES6U3 Package Code Basic ordering unit (pieces) Taping T2R 8000 ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (1)Gate (2)Source (3)Anode (3) (4)Cathode (5)Drain (6)Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP ∗1 IS ISP ∗1 Channel temperature Power dissipation Tch PD ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cyc.
∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM ∗1 Tj PD ∗2 Limits 30 ±20 ±1.
4 ±2.
8 0.
5 2.
8 150 0.
7 Limits 25 20 0.
5 2.
0 150 0.
5 Unit V V A A A A °C W / ELEMENT Unit V V A A °C W / ELEMENT Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg www.
rohm.
com ○c 2009 ROHM Co.
, Ltd.
All rights reserved.
Limits 0.
8 −55 to +150 Unit W / TOTAL °C 1/4 2009.
03 - Rev.
A ES6U3 zElectrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on)∗ Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge...


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