DatasheetsPDF.com

S8050

UTC
Part Number S8050
Manufacturer UTC
Description LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Published Nov 25, 2015
Detailed Description UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  D...
Datasheet PDF File S8050 PDF File

S8050
S8050

Overview
UNISONIC TECHNOLOGIES CO.
, LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.
 FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550  ORDERING INFORMATION Order Number Lead Free Plating Halogen Free Package S8050L-x-T92-B S8050G-x-T92-B TO-92 S8050L-x-T92-K S8050G-x-T92-K TO-92 Note: Pin Assignment: E: Emitter B: Base C: Collector 1 Pin Assignment 1 2 3 EBC EBC TO-92 Packing Tape Box Bulk  MARKING www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R201-013.
E S8050 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 30 V 20 V Emitter-Base Voltage Collector Current VEBO IC 5 V 700 mA Collector Dissipation (TA=25°C) PC Junction Temperature TJ 1 W +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT Cob  CLASSIFICATION OF hFE2 TEST CONDITIONS IC=100A, IE=0 IC=1mA, IB=0 IE=100μA, Ic=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=150 mA VCE=1V, I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)