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BC807-25W

ON Semiconductor
Part Number BC807-25W
Manufacturer ON Semiconductor
Description PNP Transistor
Published Dec 1, 2015
Detailed Description General Purpose Transistors PNP Silicon BC807-25W, BC807-40W Features • S Prefix for Automotive and Other Applications R...
Datasheet PDF File BC807-25W PDF File

BC807-25W
BC807-25W

Overview
General Purpose Transistors PNP Silicon BC807-25W, BC807-40W Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −45 −50 −5.
0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 460 mW 272 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
FR−4 Board, 1 oz.
Cu, 100 mm2.
DATA SHEET www.
onsemi.
com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SC−70 CASE 419 STYLE 3 MARKING DIAGRAM 5x M G G 1 5x = Device Code x = B or C M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014 1 March, 2022 − Rev.
5 Publication Order Number: BC807−25W/D BC807−25W, BC807−40W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter −Base Breakdown Voltage (IE = −1.
0 mA) V(BR)EBO −5.
0 − − V Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ON CHARACTERIST...


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