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K1162

Hitachi Semiconductor
Part Number K1162
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Published Dec 6, 2015
Detailed Description 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High sp...
Datasheet PDF File K1162 PDF File

K1162
K1162

Overview
2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1.
Gate 2.
Drain (Flange) S 3.
Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 10 30 10 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1161, 2SK1162 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1161 V(BR)DSS 2SK1162 450 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate v...


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