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K3078

Toshiba Semiconductor
Part Number K3078
Manufacturer Toshiba Semiconductor
Description SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Published Dec 12, 2015
Detailed Description 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (N...
Datasheet PDF File K3078 PDF File

K3078
K3078

Overview
2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.
These TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit: mm z Output Power z Gain z Drain Efficiency : PO = 27.
0 dBmW (Min.
) : GP = 12.
5 dB (Min.
) : ηD = 46% (Typ.
) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain C...


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