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2SA2183

Part Number	2SA2183
Manufacturer	Toshiba
Description	Silicon PNP Epitaxial Type Transistor
Published	Jan 5, 2016
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter satura...
Datasheet	2SA2183 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter saturation : VCE(sat) = −1.
0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current DC Pulse IC ICP −5.
0 −8.
0 A A Base current IB −0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 −55 to 150 W W °C °C 1 : Base 2 : Collector 3 : Emitter JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10U1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 1.
7 g (typ.
) operating temperature/current/voltage, etc.
) are within the ab...

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