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A2183

Toshiba
Part Number A2183
Manufacturer Toshiba
Description Silicon PNP Epitaxial Type Transistor
Published Jan 5, 2016
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter satura...
Datasheet PDF File A2183 PDF File

A2183
A2183

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter saturation : VCE(sat) = −1.
0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current DC Pulse IC ICP −5.
0 −8.
0 A A Base current IB −0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 −55 to 150 W W °C °C 1 : Base 2 : Collector 3 : Emitter JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10U1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 1.
7 g (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-16 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Switching time Rise time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tr tstg tf VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.
5 A VCE = −2 V, IC = −1.
6 A IC = −1.
6 A, IB = −53 mA IC = −1.
6 A, IB = −53 mA VCE = −10 V, IC = −0.
5 A VCB = −10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram VCC≒−30V,RL=18.
75Ω IB1 = −53 mA...


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