DatasheetsPDF.com

MBR3045C

UTC
Part Number MBR3045C
Manufacturer UTC
Description 30A SCHOTTKY BARRIER RECTIFIER
Published Jan 26, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MBR3045C 30A SCHOTTKY BARRIER RECTIFIER DIODES  FEATURES * Guard Ring for Transient Prot...
Datasheet PDF File MBR3045C PDF File

MBR3045C
MBR3045C

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MBR3045C 30A SCHOTTKY BARRIER RECTIFIER DIODES  FEATURES * Guard Ring for Transient Protection * Low Power Loss, High Efficiency * High Surge Capability * High Current Capability and Low Forward Voltage Drop  SYMBOL DIODE  ORDERING INFORMATION Order Number Lead Free Halogen Free MBR3045CL-TA3-T MBR3045CG-TA3-T MBR3045CL-TF1-T MBR3045CG-TF1-T MBR3045CL-TF3-T MBR3045CG-TF3-T MBR3045CL-TQ2-T MBR3045CG-TQ2-T MBR3045CL-TQ2-R MBR3045CG-TQ2-R Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F1 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 A K A A K A A K A A K A A K A Packing Tube Tube Tube Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 1 QW-R202-028.
D MBR3045C DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VR 45 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM 45 V VRWM 45 V Maximum PMS Reverse Voltage VR(RMS) 31.
5 V Average Rectified Forward Current (Rated VR) TC=130°C (Note 1) Per Leg Total IO 15 A 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) (TC=125°C) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied At Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 150 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs Typical Junction Capacitance (Note 3) Operating Junction Temperature (Note 3) CJ 450 pF TJ -65 ~ +150 °C Storage Temperature TSTG -65 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ<1/θJA.
3.
Measured at 1.
0MHz and applied reverse voltage of 4.
0V DC.
 THERMAL DATA PARAMETER Junction ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)