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1SS385F

Toshiba Semiconductor
Part Number 1SS385F
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward volt...
Datasheet PDF File 1SS385F PDF File

1SS385F
1SS385F

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 (*) 100 (*) 1 (*) 100 125 −55∼125 −40∼100 *: Unit rating.
Total rating = unit rating × 1.
5 Electrical Characteristics (Ta = 25°C) Unit V V mA mA A mW °C °C °C JEDEC EIAJ TOSHIBA ― ― ― Characteristic...


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