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K2461

NEC
Part Number K2461
Manufacturer NEC
Description 2SK2461
Published Jan 30, 2016
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461...
Datasheet PDF File K2461 PDF File

K2461
K2461

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications.
FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX.
(@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.
1 Ω MAX.
(@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP.
• Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings 15.
0 ±0.
3 3 ±0.
1 12.
0 ±0.
2 PACKAGE DIMENSIONS (in millimeters) 10.
0 ±0.
3 4.
5 ±0.
2 3.
2 ±0.
2 2.
7 ±0.
2 13.
5MIN.
4 ±0.
2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±20 A Drain Current (pulse)* ID(pulse) ±80 A Total Power Dissipation (Tc = 25 ˚C) PT1 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.
0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 20 A Single Avalanche Energy** EAS...


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