DatasheetsPDF.com

1N3765

GeneSiC
Part Number 1N3765
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Feb 3, 2016
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive N...
Datasheet PDF File 1N3765 PDF File

1N3765
1N3765

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
3 ms 700 800 900 490 560 630 700 800 900 35 35 35 475 475 475 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 1000 700 1000 35 475 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)