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1N4595R

GeneSiC
Part Number 1N4595R
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Feb 3, 2016
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive ...
Datasheet PDF File 1N4595R PDF File

1N4595R
1N4595R

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
3 ms 60 Hz Half wave 1000 1000 150 3000 37200 -55 to 150 -55 to 150 1200 1200 150 3000 37200 -55 to 150 -55 to 150 1400 1400 150 3000 37200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N4594(R) Diode forward volt...


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