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HS8K1

Rohm
Part Number HS8K1
Manufacturer Rohm
Description Power MOSFET
Published Feb 12, 2016
Detailed Description HS8K1 　　30V Nch+Nch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 14.6mΩ 11.8mΩ ±10A ±11A 2.0W ...
Datasheet PDF File HS8K1 PDF File

HS8K1
HS8K1


Overview
HS8K1 　　30V Nch+Nch Power MOSFET Symbol VDSS RDS(on)(Max.
) ID PD Tr1:Nch Tr2:Nch 30V 30V 14.
6mΩ 11.
8mΩ ±10A ±11A 2.
0W lFeatures 1) Low on - resistance 2) Pb-free lead plating ; RoHS compliant 3) Halogen Free lOutline HSML3030L10 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8.
0 3000 Taping code TB Marking HS8K1 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Nch Unit Drain - Source voltage VDSS 30 30 V Continuous drain current ID ±10 ±11 A Pulsed drain current IDP*1 ±40 ±44 A Gate - Source voltage VGSS ±20 ±20 V Avalanche current, single pulse IAS*2 10 11 A Avalanche energy, single pulse EAS*2 7.
6 9.
1 mJ Power dissipation PD*3 2.
0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/16 20170817 - Rev.
005 　 　 HS8K1 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*3 Values Min.
Typ.
Max.
- - 62.
5 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Type Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Tr1 V(BR)DSS Tr2 　ΔV(BR)DSS　 Tr1 　　 ΔTj 　 　 Tr2 VGS = 0V, ID = 1mA VGS = 0V, ID = 1mA ID = 1mA, referenced to 25℃ ID = 1mA, referenced to 25℃ Zero gate voltage drain current IDSS Tr1 VDS = 24V, VGS = 0V Tr2 VDS = 24V, VGS = 0V Gate - Source leakage current IGSS Tr1 VDS = 0V, VGS = ±20V Tr2 VDS = 0V, VGS = ±20V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) Tr1 VDS = VGS, ID = 1mA Tr2 VDS = VGS, ID = 1mA 　ΔVGS(th) 　 Tr1 ID = 1mA, referenced to 25℃ 　...


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