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1N40

Unisonic Technologies
Part Number 1N40
Manufacturer Unisonic Technologies
Description N-Channel Power MOSFET
Published Feb 17, 2016
Detailed Description 1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N40 is an N-ch...
Datasheet PDF File 1N40 PDF File

1N40
1N40


Overview
1N40 UNISONIC TECHNOLOGIES CO.
, LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology.
This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
 FEATURES * High switching speed * RDS(ON)=6.
8Ω @ VGS=10V * 100% avalanche tested  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 1N40G-AA3-R 1N40L-TA3-T 1N40G-TA3-T 1N40L-T92-B 1N40G-T92-B 1N40L-T92-K 1N40G-T92-K Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 TO-92 TO-92 Pin Assignment 123 GDS GDS GDS GDS Packing Tape Reel Tube Tape Box Bulk www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-529.
c 1N40  MARKING SOT-223 Preliminary TO-251 Power MOSFET TO-92 UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 5 QW-R502-529.
c 1N40 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 2) ID IDM 1.
4 A 5.
6 A Avalanche Current (Note 2) IAR 1.
4 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 85 mJ 2.
5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns SOT-223 1W Power Dissipation TO-220 25 W TO-92 SOT-223 PD 2.
5 W 125 W/°C Derate above 25°C TO-220 0.
2 W/°C TO-92 0.
02 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be per...


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