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K2586

Hitachi Semiconductor
Part Number K2586
Manufacturer Hitachi Semiconductor
Description 2SK2586
Published Feb 19, 2016
Detailed Description 2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m t...
Datasheet PDF File K2586 PDF File

K2586
K2586

Overview
2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th.
Edition D G1 2 3 1.
Gate 2.
Drain (Flange) S 3.
Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID*2 I *1 D(pulse) I DR* 2...


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