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1N60Z

Unisonic Technologies
Part Number 1N60Z
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 1N60Z 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOS...
Datasheet PDF File 1N60Z PDF File

1N60Z
1N60Z


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 1N60Z 1.
2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) <11.
5Ω@ VGS=10V, ID=0.
6A * Ultra Low gate charge (typical 5.
0nC) * Low reverse transfer capacitance (CRSS = typical 3.
0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 1N60ZG-AA3-R 1N60ZL-T92-B 1N60ZG-T92-B 1N60ZL-T92-K 1N60ZG-T92-K 1N60ZL-TN3-R 1N60ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-92 TO-92 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tape Reel Tape Box Bulk Tape Reel www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-724.
D 1N60Z  MARKING PACKAGE SOT-223 TO-252 TO-92 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-724.
D 1N60Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±20 V IAR 1.
2 A Continuous Drain Current ID 1.
2 A Pulsed Drain Current (Note 2) IDM 4.
8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 50 mJ 4.
0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns SOT-223 0.
8 Power Dissipation (TA=25°C) TO-252 TO-92 PD 1.
5 W 1 Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyo...


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