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1N70

Unisonic Technologies
Part Number 1N70
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 1N70 1.2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70 is a high voltage MOSFE...
Datasheet PDF File 1N70 PDF File

1N70
1N70


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 1N70 1.
2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) < 13.
5Ω @ VGS = 10V, ID = 0.
6A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 1N70L-TM3-T 1N70G-TM3-T TO-251 1N70L-TMA-T 1N70G-TMA-T TO-251L 1N70L-TN3-R 1N70G-TN3-R TO-252 1N70L-T92-B 1N70G-T92-B TO-92 1N70L-T92-K 1N70G-T92-K TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tape Reel Tape Box Bulk 1N70L-TM3-T (1)Packing Type (2)Package Type (3)Green Package (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) TM3: TO-251, TMA: TO-251L, TN3: TO-252, T92: TO-92 (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING TO-251 / TO-251L / TO-252 TO-92 UTC 1N70 1 L: Lead Free G: Halogen Free Data Code www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R502-171.
E 1N70 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 700 ±30 V V Avalanche Current (Note 2) Continuous Drain Current IAR 1.
2 A ID 1.
2 A Pulsed Drain Current (Note 2) Avalanche Energy (Note 2) Single Pulsed Repetitive Peak Diode Recovery dv/dt (Note 3) IDM EAS EAR dv/dt 4.
8 A 50 mJ 4.
0 mJ 4.
5 V/ns Power Dissipation TO-251/TO-251L TO-252 TO-92 PD 28 W 1.
6 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperat...



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