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TF215

Unisonic Technologies
Part Number TF215
Manufacturer Unisonic Technologies
Description JFET
Published Feb 21, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF...
Datasheet PDF File TF215 PDF File

TF215
TF215

Overview
UNISONIC TECHNOLOGIES CO.
, LTD TF215 Preliminary N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR  DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone.
 FEATURES * Good voltage characteristics and transient characteristics.
JFET  ORDERING INFORMATION Ordering Number TF215G-x-AN3-R Note: Pin Assignment: S: Source D: Drain G: Gate Package SOT-523 Pin Assignment 123 SDG Packing Tape Reel  MARKING TF215-E3 E3 TF215-E4 E4 TF215-E5 E5 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R206-096.
c TF215 Preliminary JFET  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Drain Voltage VGDO -20 V Gate Current IG 10 mA Drain Current ID 1 mA Power Dissipation PD 100 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -55~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER G-D Breakdown Voltage Gate Off Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage SYMBOL BVGDO VGS(OFF) IDSS |YFS| CISS CRSS GV △GVV △GVf ZIN ZO THD VNO TEST CONDITIONS MIN TYP MAX UNIT IG=-100μA VDS=5.
0V, ID=1μA -20 -0.
2 -0.
6 -1.
0 V V VDS=5.
0V, VGS=0 VDS=2.
0V, VGS=0, f=1KHz 100 350 μA 0.
8 1.
2 mS VDS=5.
0V, VGS=0, f=1MHz VDS=5.
0V, VGS=0, f=1MHz 3.
5 pF 0.
65 pF VIN=10mV, f=1KHz VIN=10mV, f=1KHz VCC=4.
51.
5V -3.
0 dB -1.
2 -3.
5 dB f=1KHz~110Hz -1.
0 dB f=1KHz 25 MΩ f=1KHz 1000 Ω VIN=30mV, f=1KHz 1.
2 % VIN=0, A Curve -110 dB  CLASSIFICATION OF IDSS RANK RANGE...


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