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9012

Unisonic Technologies
Part Number 9012
Manufacturer Unisonic Technologies
Description PNP Silicon Transistor
Published Mar 3, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B...
Datasheet PDF File 9012 PDF File

9012
9012

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES *High total power dissipation.
(625mW) *High collector current.
(-500mA) *Excellent hFE linearity *Complementary to UTC 9013  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector 1 TO-92 Package TO-92 TO-92 Pin Assignment 123 EBC EBC Packing Tape Box Bulk  MARKING INFORMATION PACKAGE TO-92 MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, LTD 1 of 3 QW-R201-029.
B 9012 PNP SILICON EPITAXIAL TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage Collector-emitter voltage VCBO VCEO -40 -20 V V Emitter-base voltage Collector current VEBO IC -5 -500 V mA Collector dissipation Junction Temperature PC 625 mW TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on) TEST CONDITIONS IC=-100μA,IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA MIN TYP MAX UNIT -40 V -20 V -5 V -100 nA -100 nA 64 120 300 40 90 -0.
18 -0.
6 V -0.
95 -1.
2 V -0.
6 -0.
67 -0.
7 V  CLASSIFICATION OF hFE1 ...


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