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MBR6060R

GeneSiC
Part Number MBR6060R
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Mar 3, 2016
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: ...
Datasheet PDF File MBR6060R PDF File

MBR6060R
MBR6060R

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms 45 32 45 60 700 -55 to 150 -55 to 150 60 42 60 60 700 -55 to 150 -55 to 150 80 50 80 60 700 -55 to 150 -55 to 150 100 70 100 60 700 -55 to 150 -55 to 150 V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditi...


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