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MBR8060

GeneSiC
Part Number MBR8060
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Mar 3, 2016
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: ...
Datasheet PDF File MBR8060 PDF File

MBR8060
MBR8060

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR8045 thru MBR80100R VRRM = 45 V - 100 V IF(AV) = 80 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltag RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 50 80 -55 to 150 -55 to 150 100...


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