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MBR8030

GeneSiC
Part Number MBR8030
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Mar 3, 2016
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1...
Datasheet PDF File MBR8030 PDF File

MBR8030
MBR8030

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
MBR8020 thru MBR8040R VRRM = 20 V - 40 V IF(AV) = 80 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit Repetitive peak reverse voltag RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Maxim...


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