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K2007

Hitachi Semiconductor
Part Number K2007
Manufacturer Hitachi Semiconductor
Description 2SK2007
Published Mar 6, 2016
Detailed Description 2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File K2007 PDF File

K2007
K2007


Overview
2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1.
Gate 2.
Drain (Flange) S 3.
Source 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 250 ±30 20 80 20 100 150 –55 to +150 Uni...



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