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60T

nELL
Part Number 60T
Manufacturer nELL
Description TRIACs
Published Mar 10, 2016
Detailed Description SEMICONDUCTOR 60T Series RRooHHSS TRIACs, 60A Snubberless FEATURES High current triac Low thermal resistance with cli...
Datasheet PDF File 60T PDF File

60T
60T

Overview
SEMICONDUCTOR 60T Series RRooHHSS TRIACs, 60A Snubberless FEATURES High current triac Low thermal resistance with clip bonding Low thermal resistance for TO-247S (Super TO-247) package High commutation capability 60T series are UL certified (File ref: E320098) Packages are RoHS compliant APPLICATIONS The snubberless concept offer suppression of RC network and it is suitable for applications such as on/off function in static relays, heating regulation, induction motor starting circuits, phase control operation in light dimmers, motor speed controllers, and similar.
Due to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
MAIN FEATURES SYMBOL IT(RMS) VDRM/VRRM IGT(Q1) VALUE 60 1000 to 1600 35 to 50 UNIT A V mA G A2 A1 TO-247S (non-Insulated) (60TxxD) 2(A2) 3(G) 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RMS on-state current (full sine wave) IT(RMS) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing I2t Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt Peak gate current IGM Peak gate power dissipation Average gate power dissipation PGM PG(AV) Storage temperature range Tstg Operating junction temperature range Tj F =50 Hz F =60 Hz tp = 10 ms TEST CONDITIONS Tc = 72ºC t = 10 ms t = 8.
3 ms t = 10 ms F =120 Hz, IG = 2xIGT, tr ≤ 100ns Tj =125ºC Tp =20 µs Tp =20 µs Tj =125ºC Tj =125ºC Tj =125ºC VALUE 60 600 628 1800 100 8 10 2 - 40 to + 150 - 40 to + 125 UNIT A A A2s A/µs A W ºC www.
nellsemi.
com Page 1 of 4 SEMICONDUCTOR 60T Series RRooHHSS ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) SYMBOL TEST CONDITIONS QUADRANT IGT(1) VGT VGD IH(2) VD = 12 V, RL = 33Ω VD = VDRM, RL = 3.
3KΩ Tj = 125°C IT = 500 mA IL IG = 1.
2 IGT dV/dt(2) (dI/dt)c(2) VD = 67% VDRM, gate open ,Tj = 125°C Without snubber, Tj = 125°C I - II - III I - II - III I - II - I...


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