DatasheetsPDF.com

IRFS350

Fairchild Semiconductor
Part Number IRFS350
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Mar 22, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet PDF File IRFS350 PDF File

IRFS350
IRFS350

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 400V ♦ Low RDS(ON): 0.
254Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds IRFS350 BVDSS = 400 V RDS(on) = 0.
3Ω ID = 11.
5 A TO-3PF 1 2 3 1.
Gate 2.
Drain 3.
Source Value 400 11.
5 7.
3 68 ±30 1134 11.
5 9.
2 4.
0 92 0.
74 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/°C °C Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--- Max.
1.
35 40 Units °C/W Rev.
B ©1999 Fairchild Semiconductor Corporation IRFS350 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min.
Typ.
Max.
Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge 400 -- -- V -- 0.
46 -- V/°C 2.
0 -- 4.
0 V -- -- 100 nA -- -- -100 -- -- 10 -- -- 100 µA -- -- 0.
3 Ω -- 9.
75 --- 2140 2780 -- 305 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)