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A1182

Part Number	A1182
Manufacturer	Toshiba
Description	2SA1182
Published	Mar 25, 2016
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Application...
Datasheet	A1182 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC TO-236MOD Note: Using continuous...

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