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D750

INCHANGE
Part Number D750
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Apr 4, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 DESCRIPTION ·Collector-Emitte...
Datasheet PDF File D750 PDF File

D750
D750

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Current Capability APPLICATIONS ·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.
5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V ICBO Collector Cutoff Current VCB= 40V; IE= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V hFE-2 DC Current Gain IC= 5A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.
5A; VCE= 10V MIN TYP.
MAX UNIT 80 V 7V 2.
0 V 1.
5 V 30 μA 40 30 120 1 MHz ‹ hFE-2 Classifications QPO 30-60 40-80 60-120 isc website：www.
iscsemi.
cn 2 ...


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