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BZU1

ETC
Part Number BZU1
Manufacturer ETC
Description GLASS PASSIVATED SILICON DAMPING DIODE
Published Apr 7, 2016
Detailed Description BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon diffusion mesa. 2. Glass Passivated package...
Datasheet PDF File BZU1 PDF File

BZU1
BZU1

Overview
BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1.
Silicon diffusion mesa.
2.
Glass Passivated package.
3.
Small volume, light weight.
4.
Small high-temperature leakage.
5.
Good thermal stability.
6.
High reliability.
7.
Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Voltage Average Forward Voltage Non-repeat Forward Surge Current Peak Reverse Current Peak Reverse Current Junction Temperature Reverse Recovery Time Symbols Unit T °C VRRM IF(AV) VFM VF IFSM IRM1 IRM2 Tjm trr V A V V A uA uA °C uS (Ta = 25°C ) Specifications Test Condition Rectifier, damping circuit.
-55~+150 GS 50~1400 1.
0 A~G: 1.
8 H~J: 2.
5 I=AIF(AV),A=3.
1415926 1.
0 I=IF(AV) Single-phase industrial frequency 30 sine half wave 10ms 10 VR=VRRM, Ta=25°C 200 VR=VRRM, Ta=125°C 150 4 VR=10V,IF=50mA,RL=75ohms SPECIFICATIONS: AB C 50V 100V 200V D 300V E 400V F 600V G 800V H 1000V IJ 1200V 1400V Outline and Dimensions: Contact: Jandy Lei Tel.
: 13991730782 QQ: 1142478250 sxqlljd@hotmail.
com 4 ...


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