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TYN612

HAOPIN
Part Number TYN612
Manufacturer HAOPIN
Description SCRs
Published Apr 10, 2016
Detailed Description TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TYN612 SCRs Description Glass passivated, sensitive gate thyristors in a plast...
Datasheet PDF File TYN612 PDF File

TYN612
TYN612


Overview
TM HPM HAOPIN MICROELECTRONICS CO.
,LTD.
TYN612 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol Simplified outline ak g Pin 1 1 2 3 TO-220 Description Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 600 V On-state RMS current to 12A Ultra low gate trigger current SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive surge peak on-state current Value 600 12 140 Unit V A A SYMBOL PARAMETER Rth( j-c) Junction to case(DC) Rth( j-a) Junction to ambient CONDITIONS MIN TYP - 1.
3 MAX UNIT - /W - 60 - /W http://www.
haopin.
com 1/5 TM HPM HAOPIN MICROELECTRONICS CO.
,LTD.
TYN612 SCRs Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN V /VDRM RRM IT(RMS) RMS on-state current 180oC conduction angle Tc=105 - ITSM Non repetitive surge peak on-statecurrent Tj=25oC tp=8.
3ms Tj=25oC tp=10ms - I T ( AV ) Average on-state current 180oC conduction angle Tc=105 - Value 600 12 - 146 140 - UNIT V A A A A I2t DI/dt IGM IDRM IRRM P G(AV) Tstg Tj I2t Value for fusing Critical rate of rise of on-state current Peak gate current V =VDRM RRM V =VDRM RRM Average gate power dissipation Storage junction temperature range Operating junction Temperature range Tp=10ms Tj=25 IG=2x I ,GT tr<=100ns F=60HZ Tj=125 tp=20us Tj=125 Tj=25 Tj=125 Tj=125 - - - -40 -40 98 A2S 50 A/ s 4A 5A 2 mA 1W 150 125 TJ=25OC unless otherwise stated SYMBOL PARAMETER CONDITIONS Static characteristics IGT VD=12V; RL=33 VGT IL IG=1.
2IGT IH VGD dV/dt IT=500mA Gate open VD=VDRM RL=3.
3K Tj=125 VD=67%VDRM Gateopen;TJ=125 D...


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