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1N5821S

EIC discrete Semiconductors
Part Number 1N5821S
Manufacturer EIC discrete Semiconductors
Description SCHOTTKY BARRIER RECTIFIER DIODES
Published Mar 23, 2005
Detailed Description 1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES : * * * * * * * High current capability High surge curren...
Datasheet PDF File 1N5821S PDF File

1N5821S
1N5821S

Overview
1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.
0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES D2A 0.
161 (4.
1) 0.
154 (3.
9) 1.
00 (25.
4) MIN.
0.
284 (7.
2) 0.
268 (6.
8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.
645 gram 0.
040 (1.
02) 0.
0385 (0.
98) 1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters ) Rating at 25 ° C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Curr...


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