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1N3595

Central Semiconductor
Part Number 1N3595
Manufacturer Central Semiconductor
Description SILICON LOW LEAKAGE DIODE
Published Apr 14, 2016
Detailed Description 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar ...
Datasheet PDF File 1N3595 PDF File

1N3595
1N3595

Overview
1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications.
Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.
0s pulse) Peak Forward Surge Current (1.
0µs pulse) Power Dissipation Operating and Storage Junction Temperature VRRM VRWM IO IF if IFSM IFSM PD TJ,Tstg 150 125 150 225 600 500 4.
0 500 -65 to +200 V V mA mA mA mA A mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL IR IR IR IR BVR VF VF VF VF VF VF CT trr TEST CONDITIONS VR=125V VR=125V, TA=125°C VR=125V, TA=150°C VR=30V, TA=125°C IR=100µA IF=1.
0mA IF=5.
0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.
0MHz VR=3.
5V, If=10mA, RL=1.
0kΩ MIN MAX UNITS 1.
0 500 3.
0 300 150 0.
54 0.
69 0.
62 0.
77 0.
65 0.
80 0.
75 0.
88 0.
79 0.
92 0.
83 1.
0 8.
0 3.
0 nA nA µA nA V V V V V V V pF µs (SEE REVERSE SIDE) R1 1N3595 Low Leakage Diode JEDEC DO-35 CASE - MECHCANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.
018 0.
022 0.
46 0.
56 B 0.
120 0.
200 3.
05 5.
08 AD C 0.
060 0.
090 1.
52 2.
29 D 1.
000 - 25.
40 - DO-35 (REV: R0) B C D R1 Marking Code: C1N3595 R1 ...


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