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1N4446

Philips
Part Number 1N4446
Manufacturer Philips
Description High-speed diodes
Published Apr 14, 2016
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes Product specification Supersedes dat...
Datasheet PDF File 1N4446 PDF File

1N4446
1N4446

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 15 Philips Semiconductors High-speed diodes Product specification 1N4148; 1N4446; 1N4448 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max.
4 ns • General application • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
75 V • Repetitive peak forward current: max.
450 mA • Forward voltage: max.
1 V.
APPLICATIONS • High-speed switching.
DESCRIPTION The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
handbook, halfpagke a MAM246 The diodes are type branded.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS VRRM VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature see Fig.
2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 1 ms t=1s Tamb = 25 °C; note 1 Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
− − − − MAX.
75 75 200 450 UNIT V V mA mA − 4A − 1A − 0.
5 A − 500 mW −65 +200 °C − 200 °C 1996 Apr 15 2 Philips Semiconductors High-speed diodes Product specification 1N4148; 1N4446; 1N4448 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER VF forward voltage 1N4148 1N4446 1N4448 IR reverse current IR reverse current; 1N4448 Cd diode capacitance trr reverse recovery time Vfr forward recovery voltage CONDITIONS see Fig.
3 IF = 10 mA IF = 20 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.
5 VR = 20 V;...


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