DatasheetsPDF.com

MPSA26 Datasheet PDF

Central Semiconductor
Part Number MPSA26
Manufacturer Central Semiconductor
Title SILICON NPN DARLINGTON TRANSISTORS
Description The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for ...
Features 0,000 10,000 125 - MPSA27 MIN MAX -- 100 -- 500 - 100 60 60 - 1.5 - 2.0 10,000 10,000 125 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA V V V V MHz R0 (18-March 2014) MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MA...

File Size 335.57KB
Datasheet PDF File MPSA26 PDF File


MPSA26 MPSA26 MPSA26




Similar Ai Datasheet

MPSA05 : MPSA05 (NPN) & MPSA06 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter MPSA05 . Voltage, .. V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA06 . . 80V Collector−Base Voltage, MPSA05 . V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MPSA05 : MPSA05 ... MPSA06 MPSA05 ... MPSA06 NPN General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-07-25 Power dissipation Verlustleistung Plastic case E B C Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissip.

MPSA05 : SEMICONDUCTOR TECHNICAL DATA DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES ᴌComplementary to MPSA55. ᴌDriver Stage Application of 20 to 25 Watts Amplifiers. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IE PC Tj Tstg RATING 60 60 6 500 -500 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C MPSA05 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX.

MPSA05 : Driver NPN Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA05 MPSA06 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MPSA05 MPSA06 60 80 60 80 4.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) MPSA05 MPSA06 Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) MPSA05 MPSA06 Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0.

MPSA05 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:MPSA05 Maximum Ratings Symbol Rating Rating Unit VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature 60 60 .

MPSA05 : Elektronische Bauelemente MPSA05 NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier TO-92 AD B Emitter 1 2 Base 3 Collector E CF GH 1 Emitter 2 Base 3 Collector J REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous VCBO VCEO VEBO IC 60 60 4 0.5 Collector Power Dissipation.

MPSA05 : SYMBOL MPSA05 MPSA55 MPSA06 MPSA56 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation@Ta=25°C Derate Above 25°C Total Device Dissipation@ Tc=25°C Derate Above 25°C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 60 60 4 500 625 5.0 1.5 12 -55 to +150 80 80 THERMAL RESISTANCE Junction to ambient Rth(j-a) (1) 200 Junction to case Rth(j-c) 83.3 (1) Rth(j-a) is measured with the device soldered into a typical printed circuit board. UNITS V V V mA mW mW/°C W mW/°C °C °C/mW °C/mW Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSIST.

MPSA05 : The CENTRAL SEMICONDUCTOR MPSA05, MPSA55 series devices are complementary silicon transistors designed for low power output and medium power driver applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA JC ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICES VCE=60V BVCEO IC=1.0mA (MPSA05, 55) BVCEO IC=1.0mA (MPSA06, 56) BVEBO IE=100μA VCE(SAT) IC=100mA,.

MPSA05 : www.DataSheet4U.com MPSA05, MPSA06, MPSA55, MPSA56 MPSA06 and MPSA56 are Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com NPN COLLECTOR 3 2 BASE 1 EMITTER STYLE 1 MPSA05, MPSA06 2 BASE 1 EMITTER STYLE 1 MPSA55, MPSA56 PNP COLLECTOR 3 NPN MPSA05, MPSA06 PNP MPSA55, MPSA56 MARKING DIAGRAM TO−92 CASE 29 STYLE 1 MPS Axxx YWW MAXIMUM RATINGS Rating Collector −Emitter Voltage MPSA05, MPSA55 MPSA06, MPSA56 Collector −Base Voltage MPSA05, MPSA55 MPSA06, MPSA56 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and .

MPSA05 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA05/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPSA05 MPSA06 * PNP MPSA55 MPSA56 * Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 – 55 to +150 MPSA06 MPSA56 80 80 Unit *Motorola Pre.

MPSA05 : This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 10. September 2015 123 Straight Lead Bulk Packing 12 3 TO-92 1. Emitter 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number MPSA05RA MMBTA05 Marking MPSA05 1H 3 2 1 SOT-23 Mark: 1H 1. Base 2. Emitter 3. Collector Package TO-92 3L SOT-23 3L Packing Method Tape and Reel Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In.

MPSA05 : UNISONIC TECHNOLOGIES CO., LTD MPSA05/55 AMPLIFIER TRANSISTOR NPN MPSA05 PNP MPSA55  FEATURES * Collector-Emitter Voltage: VCEO=60V 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA05L-T92-B MPSA05G-T92-B MPSA05L-T92-K MPSA05G-T92-K MPSA55L-T92-B MPSA55G-T92-B MPSA55L-T92-K MPSA55G-T92-K MPSA55L-T92-A-B MPSA55G-T92-A-B MPSA55L-T92-A-K MPSA55G-T92-A-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 123 EBC EBC EBC EBC ECB ECB Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk  MARKING INFORMATION PACKAGE MPSA05 TO-92 MARKING MPSA55 www.unisonic.com.tw Copyright © 2014 Uni.

MPSA05 : www.DataSheet4U.com MPSA05 MPSA06 Driver NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA05 60 60 4.0 500 0.625 150 -55 to +150 MPSA06 80 80 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) MPSA05 MPSA06 Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) MPSA05 MPSA06 Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 50.

MPSA06 : MPSA05 (NPN) & MPSA06 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter MPSA05 . Voltage, .. V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V MPSA06 . . 80V Collector−Base Voltage, MPSA05 . V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MPSA06 : MPSA05 ... MPSA06 MPSA05 ... MPSA06 NPN General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-07-25 Power dissipation Verlustleistung Plastic case E B C Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissip.

MPSA06 : Driver NPN Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA05 MPSA06 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MPSA05 MPSA06 60 80 60 80 4.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) MPSA05 MPSA06 Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) MPSA05 MPSA06 Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0.

MPSA06 : NPN transistor in a TO-92; plastic package. PNP complement: MPSA56. 0.46±0.1 0.43+–00..0078 (1.27 Typ.) 1.25±0.2 12 3 2.54±0.1 1: Emitter 2: Base 3: Collector Symbol PCM I CM V(BR)CBO Tstg TJ Parameter Power Dissipation Collector Current Collector-Base Voltage Storage Temperature Junction Temperature Value 0.625 0.5 80 -55~+150 150 Units W A V CO CO ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Ba.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)