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BD751

Part Number	BD751
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistors
Published	Apr 27, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 1...
Datasheet	BD751 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A ·High Power Dissipation ·Complement to Type BD750/750A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751 100 VCEV Collector-Emitter Voltage V BD751A 130 BD751 90 VCEO(SUS) Collector-Emitter Voltage V BD751A 120 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W...

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