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2SD1468

SeCoS
Part Number 2SD1468
Manufacturer SeCoS
Description NPN Transistor
Published Apr 28, 2016
Detailed Description Elektronische Bauelemente 2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C”...
Datasheet PDF File 2SD1468 PDF File

2SD1468
2SD1468

Overview
Elektronische Bauelemente 2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current CLASSIFICATION OF hFE Product-Rank 2SD1468-Q 2SD1468-R Range 120~270 180~390 2SD1468-S 270~560 TO-92 REF.
A B C D E F G H J K Millimeter Min.
Max.
4.
40 4.
70 4.
30 4.
70 12.
70 - 3.
30 3.
81 0.
36 0.
56 0.
36 0.
51 1.
27 TYP.
1.
10 - 2.
42 2.
66 0.
36 0.
76 1 Emitter 2 Collector 3 Base Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 30 15 5 1 625 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=50µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 15 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=50µA, IC=0 Collector Cut – Off Current ICBO - - 0.
5 µA VCB=20V, IE=0 Emitter Cut – Off Current IEBO - - 0.
5 µA VEB=4V, IC=0 DC Current Gain hFE 120 - 560 VCE=3V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.
4 V IC=500mA, IB=50mA Transition Frequency fT 50 - - MHz VCE=5V, IC=50mA, f=100MHz Collector Output Capacitance Cob - - 30 pF VCB=10V, IE=0, f=1MHz http://www.
SeCoSGmbH.
com/ 26-Mar-2012 Rev.
A Any changes of specification will not be informed individually.
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