DatasheetsPDF.com

ER1J

MDD
Part Number ER1J
Manufacturer MDD
Description SURFACE MOUNT SUPER FAST RECTIFIER
Published May 8, 2016
Detailed Description ER1A THRU ER1J SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere DO-214...
Datasheet PDF File ER1J PDF File

ER1J
ER1J


Overview
ER1A THRU ER1J SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.
0 Ampere DO-214AC/SMA 0.
067 (1.
70) 0.
051 (1.
30) 0.
177(4.
50) 0.
157(3.
99) 0.
110(2.
80) 0.
100(2.
54) 0.
012(0.
305) 0.
006(0.
152) FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Glass passivated chip junction 0.
096(2.
42) 0.
078(1.
98) 0.
060(1.
52) 0.
030(0.
76) 0.
008(0.
203)MAX.
0.
208(5.
28) 0.
188(4.
80) Dimensions in inches and (millimeters) MECHANICAL DATA Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.
002 ounce, 0.
07 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number SYMBOLS ER1A ER1B ER1C ER1D ER1E ER1G ER1J Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55 C Peak forward surge current 8.
3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.
0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range VRRM VRMS VDC I(AV) 50 100 150 200 300 400 600 35 70 105 140 210 280 420 50 100 150 200 300 400 600 1.
0 IFSM VF IR trr CJ RθJA TJ,TSTG 30.
0 0.
95 5.
0 50.
0 35 15.
0 60.
0 -65 to +150 1.
25 1.
7 Note:1.
Reverse recovery condition IF=0.
5A,IR=1.
0A,Irr=0.
25A 2.
Measur...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)