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BCX70K

CDIL
Part Number BCX70K
Manufacturer CDIL
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Published May 9, 2016
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC...
Datasheet PDF File BCX70K PDF File

BCX70K
BCX70K


Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.
c.
) Total power dissipation at Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f: 1 kHz VCE = 5 V; IC: 200 mA; B = 200 Hz RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) VCES VCE0 IC Ptot Tj max.
max.
max.
max.
max.
45 V 45 V 200 mA 250 mW 150 ° C fT typ.
250 MHz F typ.
2 dB VCES VCE0 VEB0 max.
max.
max.
45 V 45 V 5V Continental Device India Limited Data Sheet Page 1 of 3 BCX70G BCX70H BCX70J BCX70K Collector current (d.
c.
) Base current Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature IC max.
200 mA lB max.
50 mA Ptot max.
250 mW Tstg –55 to +150 °C Tj max.
150 ° C THERMAL RESISTANCE From junction to ambient Rth j–a = 500 K/W CHARACTERISTICS Tamb: 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 45 V VBE = 0; VCE = 45 V; Tamb = 150 °C Emitter–base cut–off current IC = 0; VEB = 4 V Saturation voltages at IC = 10 mA; IB = 0,25 mA at IC = 50 mA; IB = 1,25 mA Transition frequency at f = 100 MHz D IC = 10 mA; VCE = 5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 10 V Emitter capacitance at f = 1 MHz IC = Ic = 0; VEB = 0,5 V Noise figure at RS = 2 kW , IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz ICES ICES < < 20 nA 20 mA IEB0 < 20 nA VCEsat 0,05 to 0,35 V VBEsat 0,6 to 0,85 V VCEsat 0,1 to 0,55 V VBE...


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