Diodes. 1N4148 Datasheet

1N4148 Datasheet PDF


1N4148
www.vishay.com
1N4148
Vishay Semiconductors
Small Signal Fast Switching Diodes
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Silicon epitaxial planar diode
• Electrically equivalent diodes:
1N4148 - 1N914
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
Models
Available
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 105 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
ORDERING CODE
1N4148
1N4148-TAP or 1N4148TR
TYPE MARKING
V4148
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
Power dissipation
tp = 1 μs
VR = 0
l = 4 mm, TL = 45 °C
l = 4 mm, TL 25 °C
VRRM
VR
IFSM
IFRM
IF
IF(AV)
Ptot
Ptot
VALUE
100
75
2
500
300
150
440
500
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
VALUE
350
175
-65 to +150
UNIT
V
V
A
mA
mA
mA
mW
mW
UNIT
K/W
°C
°C
Rev. 1.4, 06-Jul-17
1
Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part 1N4148
Description Small Signal Fast Switching Diodes
Feature 1N4148; www.vishay.com 1N4148 Vishay Semiconductors Small Signal Fast Switching Diodes DESIGN SUPPORT TOO.
Manufacture Vishay Telefunken
Datasheet
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1N4148
www.vishay.com
1N4148
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
IF = 10 mA
VF
VR = 20 V
IR
VR = 20 V, Tj = 150 °C
IR
VR = 75 V
IR
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
100
VR = 0 V, f = 1 MHz,
VHF = 50 mV
CD
VHF = 2 V, f = 100 MHz
ηr
45
IF = IR = 10 mA,
iR = 1 mA
trr
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
MAX.
1
25
50
5
4
8
4
UNIT
V
nA
μA
μA
V
pF
%
ns
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
1000
1.0
IF = 100 mA
0.8
10 mA
0.6
1 mA
0.4
0.1 mA
0.2
Tj = 25 °C
100
Scattering Limit
10
0
- 30
0
30
60 90 120
94 9169
Tj - Junction Temperature (°C)
1
1
94 9098
10
100
VR- Reverse Voltage (V)
Fig. 1 - Forward Voltage vs. Junction Temperature
Fig. 3 - Reverse Current vs. Reverse Voltage
1000
100
1N4148
10
Scattering Limit
1
0.1
0
94 9170
TJ = 25 °C
0.4 0.8 1.2 1.6 2.0
V - Forward Voltage (V)
F
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.4, 06-Jul-17
2
Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



1N4148
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
1N4148
Vishay Semiconductors
Cathode identification
25.4 (1.000) min.
Document no.: 6.560-5004.12-4
Created - Date: 17. March 2008
21145
3.4 (0.134) max.
25.4 (1.000) min.
Rev. 1.4, 06-Jul-17
3
Document Number: 81857
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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