DIODE. 1N5224B Datasheet

1N5224B Datasheet PDF


Part 1N5224B
Description 500mW ZENER DIODE
Feature ® WON-TOP ELECTRONICS Features  Planar Die Construction  500mW Power Dissipation  2.4V – 47V Nomi.
Manufacture WON-TOP
Datasheet
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1N5224B
®
WON-TOP ELECTRONICS
Features
Planar Die Construction
500mW Power Dissipation
2.4V – 47V Nominal Zener Voltage
5% Standard Vz Tolerance
Low Inductance
For Use in Voltage Regulator or Reference
Plastic Case Material has UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: DO-35, Molded Glass
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 5
1N5221B – 1N5261B
500mW ZENER DIODE
Pb
AB A
D
DO-35
Dim Min Max
A 25.40 —
B — 3.80
C 0.45 0.55
D 1.65 1.95
All Dimensions in mm
C
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic
Power Dissipation at TA = 25°C (Note 1)
Forward Voltage @ IF = 200mA
Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
PD
VF
R JA
TJ, TSTG
Value
500
1.1
300
-65 to +175
Note: 1. Measured at lead length 3/8” (9.5mm) from body.
2. Valid provided that leads are kept at ambient temperature at a distance of 10mm from the case.
Unit
mW
V
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: October, 2015
www.wontop.com
1



1N5224B
1N5221B – 1N5261B
0.5
0.4
Measured at lead length
9.5mm from case.
0.3
0.2
0.1
0
0
25
20
15
10
5
35 70 105 140 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
210
10
12
15
18
TJ = 25°C
22
27
33
36
0
0
1000
5 10 15 20 25 30 35 40 45 50
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
100
TJ = 100°C
10
TJ = 25°C
1
0
0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 5 Typical Forward Characteristics
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2
®
40
TJ = 25°C
2V4
2V7
3V0
30 3V3
3V6
3V9
4V3
20
4V7
5V1
10
WON-TOP ELECTRONICS
5V6 6V8 8V2
6V2 7V5 9V1
0
0 1 2 3 4 5 6 7 8 9 10
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
10
39 47
TJ = 25°C
43
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
TJ = 25°C
f = 1MHz
@ 0V Bias
100 @ 1V Bias
10
1
10 100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 6 Junction Capacitance vs. Nominal Zener Voltage
© Won-Top Electronics Co., Ltd.
Revision: October, 2015






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