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1N6097R DIODES Datasheet PDFSCHOTTKY DIODES SCHOTTKY DIODES |
　
　
　
| Part Number | 1N6097R |
|---|---|
| Description | SCHOTTKY DIODES |
| Feature | Transys Electronics LIMITED 1N6097(R) T HRU 1N6098(R) SCHOTTKY DIODES STUD TYP E Features High Surge Capability Types up to 40V V RRM 50 A 50Amp Rectifier 2 0-40 Volts DO-5 Maximum Ratings Opera ting Temperature: -65 C to +150 Storage Temperature: -65 C to +175 B N MC Pa rt Number 1N6097(R) 1N6098(R) Maximum Recurrent Peak Reverse Voltage 30V 40V Maximum RMS Voltage 21V 28V Maximum D C Blocking Voltage 30V 40V P A J K D G F E Electrical Characteristics @ 25 Average Forward Current Peak Forwar d Surge Current Maximum NOTE (1) Ins tantaneous Forward Voltage Maximum I nstantaneous . |
| Manufacture | TRANSYS |
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| Part Number | 1N6097R |
|---|---|
| Description | Silicon Power Schottky Diode |
| Feature | Silicon Power Schottky Diode
Features †¢ High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cat hode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6097 thru 1N 6098R VRRM = 30 V - 40 V IF(AV) = 50 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Paramete r Symbol Conditions 1N6097 (R) 1N60 98 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltag e Operating temperature Storage tempera ture VRRM VRMS VDC Tj Tstg 30 21 30 - 55 to 150 -55 to 150 . |
| Manufacture | GeneSiC |
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| Part Number | 1N6097R |
|---|---|
| Description | (1N6097 - 1N6098R) Schottky Power Diode |
| Feature | Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage dro p High surge capability High efficiency , low power loss Normal and Reverse pol arity 1N6097 thru 1N6098R DO-203AB (D O-5) Maximum Ratings (TJ = 25oC, unles s otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse volta ge DC blocking voltage Continuous forwa rd current Surge non-repetitive forward current, half-sine wave Forward voltag e Reverse current TC ≤ 100 C TC = 25o C IF = 50 A TJ = 25oC VR = 30V, TJ = 25 oC VR = 30V, TJ = 125oC o Test Conditi ons Symbol VRRM VRMS VDC . |
| Manufacture | Naina Semiconductor |
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