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1SS413

Toshiba

Schottky Barrier Diode

Description
Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2002-11 1 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rat...


Toshiba

1SS413

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