22DN20N Datasheet

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22DN20N Datasheet - Power Transistor

22DN20N   22DN20N  

Datasheet: 22DN20N datasheet

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Description: Type OptiMOSTM3 Power-Transistor Feature s • Optimized for dc-dc conversion N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) • 150 C operating temperature • Pb-free le ad plating; RoHS compliant • Qualifie d according to JEDEC1) for target appli cation • Halogen-free according to IE C61249-2-21 BSZ22DN20NS3 G Product Su mmary VDS RDS(on),max ID 200 V 225 mW 7A PG-TSDSON-8 Type BSZ22DN20NS3 G P ackage Marking PG-TSDSON-8 22DN20N M aximum ratings, at T j=25 °C, unless o therwise specified Parameter Symbol C onditions Continuous drain current I D T C=25 °C Pulsed drain current2) Av alanche energy, single pulse I D,pulse E AS T C=100 °

Manufacture Part Number Description



Power Transistor

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