2N2646 Datasheet PDF
unijunction transistor
- 2N2646 | Philips
- Silicon unijunction transistor
- Download 2N2646 Datasheet
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- 2N2646 | NTE
- Unijunction Transistor
- Download 2N2646 Datasheet
- 2N2646 Unijunction Transistor
TO−18 Package
Description: The 2N2646 is designed for use in pulse an.
- 2N2646 Unijunction Transistor
TO−18 Package
Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
Features: D Low Peak Point Current: 5A (Max)
D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . ..
- 2N2646 | Motorola
- (2N2646 / 2N2647) Silicon PN unijunction transistor
- Download 2N2646 Datasheet
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- 2N2646 | Digitron Semiconductors
- SILICON UNIJUNCTION TRANSISTOR
- Download 2N2646 Datasheet
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJ.
- 2N2646, 2N2647
High-reliability discrete products and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power dissipation(1)
PD 300 mW
RMS emitter current
IE(EMS)
50
mA.
- 2N2646 | Multicomp
- Transistor
- Download 2N2646 Datasheet
- Transistor
Unijunction, TO-18
Absolute Maximum Ratings:
Tj=125°C unless otherwise noted
Symbol
Ra.
- Transistor
Unijunction, TO-18
Absolute Maximum Ratings:
Tj=125°C unless otherwise noted
Symbol
Ratings
VB2E Ie ie
VB2B1 PD TJ
TStg
Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current Interbase Voltage RMS power Dissipation Junction Temperature Storage Temperature
Pin Configurations
1. Emitter 2. Base 1 3. Base 2
Value 30 50 2 35 300
-65 to +125 -65 to +150
Unit V mA A V
mW °C °C
Electrical Characteristics:
TC=25°C unless.
- 2N2646 | Solid State
- Silicon PN Unijunction Transistor
- Download 2N2646 Datasheet
- .
- .
- 2N2646 | NTE
- Unijunction Transistor
- Download 2N2646 Datasheet
- 2N2646 Unijunction Transistor
TO−18 Package
Description: The 2N2646 is designed for use in pulse an.
- 2N2646 Unijunction Transistor
TO−18 Package
Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
Features: D Low Peak Point Current: 5A (Max)
D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . ..
- 2N2646 | Central Semiconductor
- SILICON PN UNIJUNCTION TRANSISTORS
- Download 2N2646 Datasheet
- 2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: .
- 2N2646 2N2647
SILICON PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage
SYMBOL VB2E
Interbase Voltage
VB2B1
RMS Emitter Current
Ie
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10.
