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2N2646 Datasheet PDF

unijunction transistor




2N2646 | Philips
Silicon unijunction transistor
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2N2646 | NTE
Unijunction Transistor
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2N2646 Unijunction Transistor TO−18 Package Description: The 2N2646 is designed for use in pulse an.
2N2646 Unijunction Transistor TO−18 Package Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5A (Max) D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . ..

2N2646 | Motorola
(2N2646 / 2N2647) Silicon PN unijunction transistor
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2N2646 | Digitron Semiconductors
SILICON UNIJUNCTION TRANSISTOR
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2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJ.
2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJUNCTION TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Power dissipation(1) PD 300 mW RMS emitter current IE(EMS) 50 mA.

2N2646 | Multicomp
Transistor
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Transistor Unijunction, TO-18 Absolute Maximum Ratings: Tj=125°C unless otherwise noted Symbol Ra.
Transistor Unijunction, TO-18 Absolute Maximum Ratings: Tj=125°C unless otherwise noted Symbol Ratings VB2E Ie ie VB2B1 PD TJ TStg Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current Interbase Voltage RMS power Dissipation Junction Temperature Storage Temperature Pin Configurations 1. Emitter 2. Base 1 3. Base 2 Value 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C Electrical Characteristics: TC=25°C unless.

2N2646 | Solid State
Silicon PN Unijunction Transistor
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2N2646 | NTE
Unijunction Transistor
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2N2646 Unijunction Transistor TO−18 Package Description: The 2N2646 is designed for use in pulse an.
2N2646 Unijunction Transistor TO−18 Package Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5A (Max) D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . ..

2N2646 | Central Semiconductor
SILICON PN UNIJUNCTION TRANSISTORS
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2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: .
2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10.



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