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2N3963 TRANSISTOR Datasheet PDFAMPLIFIER TRANSISTOR AMPLIFIER TRANSISTOR |
| Part Number | 2N3963 |
|---|---|
| Description | AMPLIFIER TRANSISTOR |
| Feature | MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter -Base Voltage
—Collector Current Cont inuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device D issipation
@ Tc = 25°C
Derate above 25 °C
Operating and Storage Junction Temp erature Range
2N3962 Symbol 2N3965 2N3 964 2N3963
VCEO
60
45
80
VCBO v EB O
'C
PD
60
45 6. 0 200 0. 36 2. 06 80 Unit V V V mA Watt mW/°C pd Tj. Tstg 1. 2 6. 85 -65 to +200 Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25° C unless otherwise noted. Characteristi c OFF CHARACTERISTICS Collector-Emitte r Breakdown Voltage dc = . |
| Manufacture | Motorola |
| Datasheet |
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| Part Number | 2N3963 |
|---|---|
| Description | Bipolar PNP Device |
| Feature | www. DataSheet4U. com 2N3963 Dimensions in mm (inches). 5. 84 (0. 230) 5. 31 (0. 20 9) 4. 95 (0. 195) 4. 52 (0. 178) Bipolar P NP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VC EO = 80V 0. 48 (0. 019) 0. 41 (0. 016) dia. IC = 0. 2A All Semelab hermetically se aled products can be processed in accor dance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif ications 3 2 1 2. 54 (0. 100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* I C(CONT) hFE ft PD Test Conditions Min . Typ. Max. 80 0. 2 Units V A Hz @ 5 /1m (VCE / IC) 100 . |
| Manufacture | Semelab Plc |
| Datasheet |
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| Part Number | 2N3963 |
|---|---|
| Description | PNP Silicon Transistor |
| Feature | . |
| Manufacture | Solid State |
| Datasheet |
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