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2N3963 TRANSISTOR Datasheet PDF

AMPLIFIER TRANSISTOR

AMPLIFIER TRANSISTOR

 

 

 

Part Number 2N3963
Description AMPLIFIER TRANSISTOR
Feature MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage —Collector Current Cont inuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device D issipation @ Tc = 25°C Derate above 25 °C Operating and Storage Junction Temp erature Range 2N3962 Symbol 2N3965 2N3 964 2N3963 VCEO 60 45 80 VCBO v EB O 'C PD 60 45 6.
0 200 0.
36 2.
06 80 Unit V V V mA Watt mW/°C pd Tj.
Tstg 1.
2 6.
85 -65 to +200 Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25° C unless otherwise noted.
Characteristi c OFF CHARACTERISTICS Collector-Emitte r Breakdown Voltage dc = .
Manufacture Motorola
Datasheet
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Part Number 2N3963
Description Bipolar PNP Device
Feature www.
DataSheet4U.
com 2N3963 Dimensions in mm (inches).
5.
84 (0.
230) 5.
31 (0.
20 9) 4.
95 (0.
195) 4.
52 (0.
178) Bipolar P NP Device in a Hermetically sealed TO18 Metal Package.
Bipolar PNP Device.
VC EO = 80V 0.
48 (0.
019) 0.
41 (0.
016) dia.
IC = 0.
2A All Semelab hermetically se aled products can be processed in accor dance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif ications 3 2 1 2.
54 (0.
100) Nom.
TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* I C(CONT) hFE ft PD Test Conditions Min .
Typ.
Max.
80 0.
2 Units V A Hz @ 5 /1m (VCE / IC) 100 .
Manufacture Semelab Plc
Datasheet
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Part Number 2N3963
Description PNP Silicon Transistor
Feature .
Manufacture Solid State
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