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2N5469

INCHANGE
Part Number 2N5469
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 25, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet PDF File 2N5469 PDF File

2N5469
2N5469

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular TO-66 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 700 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V Collector Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 70 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER ...


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