Transistor. 2N650 Datasheet

2N650 Datasheet PDF


2N650
2N650A, 2N650 (GERMANIUM)
2N651 A, 2N651
2N652A, 2N652
GERMANIUM PNP MILLIWATT TRANSISTORS
· .. designed primarily for low·power audio amplifier and medium·
speed switching applications.
• Stabilization Bake at 1000C for 120 Hours for
Greater Gain Stability
• Low Collector· Emitter Saturation Voltage -
0.2 Vdc Typ @ IC ~ 200 mA
'MAXIMUM RATINGS
Rating
Svmbol
Coliector·Emitter Voltage (RBE = 10 k ohms)
CollectorwBase Voltage
Emitter-Base Voltage
Collector Current - Continuous (1)
Total Device Dissipation @I T A <: 25°C
Oefi~te above 2SoC
Operating and StorageJunction Temperature Range
VCER
Vce
VEe
IC
Po
TJ, Tstg
Maximum lead temperature is 250°C for 3.0 seconds,
1/16" ±. 1/32" from case.
(1) Limited bV power dissipation.
'THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance. Junction to Ambient
*Indicates JEOEC Registered Data.
Svmbol
6JC
8JA
Value
30
46
30
500
200
2.67
-65 to +100
Unit
Vdc
Vdc
Vdc
mAde
mW
mW/DC
°c
Max
0.250
0.375
Unit
DC/mW
DC/mW
FIGURE 1 - POWER·TEMPERATURE DERATING
220
"-200 r--..... .......,
180
"1..0s 160
"~ 1411
"'" ."->=
;1;
120
ili 100
"C
"-~~ 80
60
"~ 40
""20
o
'"20
..........
' \ . 'JC = 0.25DC/mW
........
"\..
'JA = 0.375DC/mW"'-
..........
........ ~
30 40 50 60 70 80 90 100
TA,AMB1ENTTEMPERATURE (DC)
AUDIO TRANSISTORS
GERMANIUM PNP
45 VOLTS
200 MILLIWATTS
~:l;iDlA~
~.~~=tI~DlA
0.019
0.240
1.5
Hi~
Pin 1. Emitter
Z.8s.
3.Collector
CASE 31 (1)
TO-5
(All leads isolated from Case)
2-52


Part 2N650
Description PNP Transistor
Feature 2N650; 2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. des.
Manufacture Motorola
Datasheet
Download 2N650 Datasheet


2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERM 2N650 Datasheet
2N650 Datasheet
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2N650
2N650A,2N650/2N651 A,2N651 /2N652A,2N652 (continued)
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I Characteristic
I Symbol
OFF CHARACTERISTICS
Floating Potential (11
(VCB = 45 Vde, IE = 0, voltmeter input resistance ~ 10 megohms)
Collector Cutoff Current
(VCE = 30 Vde, RBE = 10 k ohms)
Collector Cutoff Current
(VCB =30 Vde, IE = 0)
(VCB = 45 Vde, IE = O)
(VCB = 10 Vde, IE = 0, TA = +71 oC)
Emitter Cutoff Current
(VEB = 30 Vde, IC = O)
VEBF
ICER
ICBO
lEBO
Min
-
-
-
-
-
-
Max
1.0
600
10
50
100
10
Unit
Vde
/lAde
/.tAde
/lAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
(I C = 50 mAde, I B = 2.5 mAde)
(lC = 50 mAde, IB = 1.67 mAde)
(I C = 50 mAde, I B = 1.25 mAde)
(lC = 100 mAde, IB =5.0 mAde)
(lC = 100 mAde, IB = 3.33 mAde)
(lC = 100 mAde, IB = 2.5 mAde)
Base-Emitter Voltage
(IC = 10 mAde, VCE = 1.0 Vde)
2N650
2N650A
2N651, A
2N652, A
2N650,A
2N651 , A
2N652,A
2N650,A
2N651, A
2N652,A
2N650,A
2N651 , A
2N652, A
hFE
VCE(sat}
VBE
30
33
45
80
-
-
-
-
-
-
-
-
-
-
-
-
-
0.250
0.250
0.250
0.500
0.500
0.500
0.270
0.260
0.250
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Common-Base Cutoff Frequency
(IE = 1.0 mAde, VCB = 6.0 Vde)
putput Capacitance (1.)
(VCB =6.0 Vde, IE = 0, f = 1.0 MHz)
Input Impedance
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
Small-Signal Current Gain
(IE = 1.0 mAde, VCE =6.0 Vde, f = 1.0 kHz)
Output Admittance (1)
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
2N650,A
2N651 , A
2N652, A
2N650, A
2N651, A
2N652, A
f ab
Cob
hib
hfe
hob
0.75
1.0
1.25
-
27
30
50
100
0.15
MHz
-
-
-
25 pF
37 Ohms
-
70
120
225
1.0 IJmhos
Noise Figure
(IE = 0.5 mAde, VCE = 4.5 Vde, RS = 1.0 k ohms,
f = 1.0 kHz, C. f = 1.0 Hz)
(1) Applies only to 2N650A, 2N651A, and 2N652A Devices
*Indicates JEDEC Registered Data.
2.0
~
:::;
<!
~ 1.0
0
z
'<"i' 0.7
<.0
~ 0.5
~
~
u=>
u
~0 0.3
0.2
0.5
FIGURE 2 - DC CURRENT GAIN
II
~J: 25'~
"'\
1\
1.0 2.0
5.0 10 20
50 100 200 500
IC,COLLECTOR CURRENT ImAI
NF - 15 dB
FIGURE 3 - "ON" VOLTAGES
1.4
1.2
on 1.0
S
0
~
O.S
w
<.0
S'" 0.6
>0 0.4
0.2
0
0.5
f- TJ: 25'C
1.0 2.0
5.0
II
i lV: ttlVrE1'Ini
\0 v-
VBElsatl@ICIIB: 10
......,... ./
./.
V
"""VCEI7tl@IC/IB 10 p
10 20
IIII
50 100
./
200 500
IC, COLLECTOR CURRENT ImAI
2-53






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