Transistor. 2N6834 Datasheet

2N6834 Datasheet PDF

Part 2N6834
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining .
Manufacture Inchange Semiconductor
Datasheet
Download 2N6834 Datasheet

2N6834 Datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor DES 2N6834 Datasheet




2N6834
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
850 V
450 V
6V
5A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
8A
PC Collector Power Dissipation@TC=25125
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
1.4
UNIT
/W
isc Product Specification
2N6834
isc websitewww.iscsemi.cn
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2N6834
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6834
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
450 V
VCE(sat)-1
VCE(sat)-2
VBE(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
IC= 1.5A; IB= 0.15A
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.4A,TC=100
VCEV= 850V;VBE(off)= 1.5V
VCEV= 850V;VBE(off)= 1.5V;TC=100
VCE= 850V; RBE= 50Ω,TC= 100
1.0 V
2.5
2.5
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO Emitter Cutoff Current
VEB= 6.0V; IC=0
1.0 mA
hFE-1
hFE-2
DC Current Gain
DC Current Gain
IC= 3A ; VCE= 5V
IC= 5A ; VCE= 5V
7.5 30
5
fT Current Gain-Bandwidth Product
COB Output Capacitance
Switching times;Resistive Load
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
IC= 0.25A ;VCE= 10V; ftest=10MHz
IE= 0; VCB= 10V; ftest=1.0kHz
15
20
75 MHz
200 pF
IC= 3A , VCC= 250V;
IB1= 0.4A; IB2= -0.8A;
PW= 30μs; RB2= 8Ω
Duty Cycle2.0%
0.03 0.1
0.1 0.3
1.0 3.0
0.06 0.3
μs
μs
μs
μs
isc websitewww.iscsemi.cn
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